Image display and a manufacturing method of the same

ABSTRACT

The present invention provides an image display capable of enhancing a production yield. The image display comprises a display device including a first plate which has a plurality of electron-emitter elements each having a structure comprised of a base electrode, an insulating layer and a top electrode stacked on one another in this order, the electron-emitter element emitting electrons from the surface of the top electrode when a voltage of positive polarity is applied to the top electrode; a plurality of first electrodes for respectively applying driving voltages to the base electrodes of the electron-emitter elements lying in a row (or column) direction; and a plurality of second electrodes for respectively applying driving voltages to the top electrodes of the electron-emitter elements lying in the column (or row) direction, a frame component, and a second plate having phosphors, wherein a space surrounded by the first plate, the frame component and the second plate is brought into vacuum. In the display apparatus, the at least one electron-emitter element includes the base electrode and the top electrode, at least one of which is connected to the first electrode or the second electrode through a resistor element.

BACKGROUND OF THE INVENTION

The present invention relates to an image display and a method ofmanufacturing the same, and particularly to a technology effective forapplication to a display apparatus which has thin-film electron emittershaving an electrode-insulator-electrode structure to emit electrons intovacuum.

The thin-film electron emitters are electron-emitter elements each usinghot electrons produced by applying a high electric field to aninsulator.

As a typical example, an MIM (Metal-Insulator-Metal) electron emittercomprising a thin film having a three-layer structure of a topelectrode-insulating layer-base electrode will be explained.

FIG. 14 is a diagram for describing the principle of operation of an MIMelectron emitter illustrated as a typical example of a thin-filmelectron emitter.

A driving voltage is applied between a top electrode 11 and a baseelectrode 13 to set an electric field within a tunneling insulator 12 to1 MV/cm to 10 MV/cm and over. Thus, electrons placed in the neighborhoodof the Fermi level in the base electrode 13 are transmitted through abarrier by tunneling phenomena. Thereafter, they are injected into theconduction bands of the tunneling insulator 12 and top electrode 11,thereby resulting in hot electrons.

Some of these hot electrons are subjected to scattering underinteraction with a solid in the tunneling insulator 12 and the topelectrode 11, thus leading to the loss of energy.

As a result, hot electrons having various energies exist when they havereached an interface between the top electrode 11 and vacuum 10.

Of these hot electrons, ones having energy larger than the work functionφ of the top electrode 11 are emitted into the vacuum 10, and ones otherthan the above ones flow into the top electrode 11.

Assuming that a current based on the electrons flowing from the baseelectrode 13 to the top electrode 11, is called a diode current (Id),and a current based on the electrons emitted into the vacuum 10 iscalled an emission current (Ie), an electron emission efficiency (Ie/Id)ranges from about 1/10³ to about 1/10⁵.

Incidentally, the MIM thin-film electron emitter has been described in,for example, Japanese Patent Application Laid-Open No. Hei 9-320456.

Now, the top electrode 11 and the base electrode 13 are provided inplural form and these plural top electrodes 11 and base electrodes 13are formed orthogonal to one another to thereby form thin-film electronemitters in matrix form. Consequently, electron beams can be producedfrom arbitrary locations and hence they can be used as electron emittersfor a display apparatus.

Namely, a display apparatus can be constructed wherein thin-filmelectron-emitter elements are placed at every pixel, and electronsemitted therefrom are accelerated in vacuo and thereafter applied toeach of phosphors to thereby allow the applied phosphor to emit light,whereby a desired image is displayed thereon.

The thin-film electron emitters have excellent features aselectron-emitter elements for the display apparatus in that they arecapable of implementing a high-resolution display apparatus because theemitted electron beams are excellent in directionality, and they areeasy to handle because they are insusceptible to the influence of theirsurface contamination, for example.

In the display apparatus using the conventional thin-film electronemitters, when one of a large number of thin-film electron-emitterelements (electron emission regions) placed in matrix form wasshort-circuited due to a failure in manufacture thereof or otherreasons, no electrons were emitted from all the thin-filmelectron-emitter elements on a row or/and a column to which such athin-film electron-emitter element was connected, thus causing no lightemission. Namely, a “point defect” of one thin-film electron-emitterelement has caused a “line defect”.

The above-described point will be explained below.

FIG. 15 is a diagram showing a schematic configuration of a conventionalthin-film electron-emitter matrix.

Thin-film electron-emitter elements 301 are respectively formed atpoints where row electrodes (base electrodes) 310 and column electrodes(top electrodes) 311 intersect respectively.

Incidentally, while the thin-film electron-emitter matrix is illustratedwith 3 rows and 3 columns in FIG. 15, the thin-film electron-emitterelements 301 are actually placed by the number of pixels constituting adisplay apparatus, or the number of sub-pixels in the case of a colordisplay apparatus.

Now, the respective thin-film electron-emitter elements 301 are directlyconnected to the row electrodes 310 and the column electrodes 311respectively.

Therefore, when, for example, a thin-film electron-emitter element 301placed at an intersection (R2, C2) of a row electrode 310 of R2 and acolumn electrode 311 of C2 is short-circuited due to a failure inmanufacture thereof or the like, the row electrode 310 of R2 and thecolumn electrode 311 of C2 are short-circuited. Hence even if an attemptwere made to apply a suitable voltage to both electrodes from a rowelectrode driving circuit 41 or a column electrode driving circuit 42,the voltage would not be applied thereto.

Therefore, all the thin-film electron-emitter elements 301 on the rowelectrode of R2, or/and all the thin-film electron-emitter elements 301on the column electrode 311 of C2 are not operated, thus causing a “linedefect”.

Even if elements equivalent to about 1/10000 of the total number ofpixels have “point defects” in a matrix-type display apparatus such as aliquid-crystal display apparatus or the like, no problem occurs from apractical standpoint and they can be used in most cases.

Namely, about 100 “point defects” can be allowed in the case of adisplay apparatus configured in 480×640×3 dots, for example.

However, one having a “line defect” such as non-light emission of allelements on one line cannot be used as a display apparatus.

Thus, the display apparatus using the conventional thin-film electronemitters was accompanied by a problem that the “point defects” producedthe “line defect”, thereby reducing production yields.

SUMMARY OF THE INVENTION

The present invention has been made to solve the problem of the priorart. An object of the present invention is to provide a technologycapable of enhancing production yields in an image display.

The above, other objects and novel features of the present inventionwill become apparent from the description of the present specificationand the accompanying drawings.

Summaries of typical one of the inventions disclosed in the presentapplication will be described in brief as follows:

There is provided an image display which comprises a display deviceincluding a first plate which has a plurality of electron-emitterelements each having a structure comprised of a base electrode, aninsulating layer and a top electrode stacked on one another in thisorder, the electron-emitter element emitting electrons from the surfaceof the top electrode when a voltage of positive polarity is applied tothe top electrode; a plurality of first electrodes for respectivelyapplying driving voltages to the base electrodes of the electron-emitterelements lying in a row (or column) direction, of the plurality ofelectron-emitter elements; and a plurality of second electrodes forrespectively applying driving voltages to the top electrodes of theelectron-emitter elements lying in the column (or row) direction, of theplurality of electron-emitter elements, a frame component, and a secondplate having phosphors, whereby a space surrounded by the first plate,the frame component and the second plate is brought to vacuum, whereinat least one the electron-emitter element includes its correspondingbase electrode and top electrode at least one of which is connected tothe first electrode or second electrode through a resistor element.

Namely, the present invention is characterized in that a resistor isinserted between a column electrode and a thin-film electron-emitterelement or between a row electrode and a thin-film electron-emitterelement, or resistors are respectively inserted between a columnelectrode and a thin-film electron-emitter element and between a rowelectrode and a thin-film electron-emitter element.

FIG. 1 is a diagram showing a schematic configuration of one example ofa thin-film electron-emitter matrix of an image display of the presentinvention.

The image display shown in FIG. 1 is equipped with a thin-filmelectron-emitter matrix in which resistors 305 are respectively insertedbetween column electrodes 311 and thin-film electron-emitter elements301.

Incidentally, the resistors 305 will be called pixel resistors in thefollowing description.

While one pixel is formed of a combination of respective sub-pixels ofred, blue and green in the case of a color image display, the “pixels”defined herein are equivalent to the sub-pixels in the case of the colorimage display. In the present specification, pixels in the case of amonochrome image display, and sub-pixels in the case of a color imagedisplay are also called “dots”.

Consider where the resistance value of the resistor 305 is set to 10times or more the output impedance of each column electrode drivingcircuit 42. Since the resistance between a row electrode 310 of R2 and acolumn electrode of C2 is sufficiently larger than the output impedanceof the corresponding driving circuit even if a thin-filmelectron-emitter element 301 at (R2, C2) is short-circuited, asufficient voltage is applied to both electrodes and hence otherthin-film electron-emitter elements 301 on both electrodes normallyoperate. Of course, the thin-film electron-emitter element 301 at (R2,C2) does not operate.

Thus, the present invention is capable of preventing the “point defects”from leading to the “line defect”.

The following restrictions are imposed on the resistance value (Rr) ofthe pixel resistor 305.

Assuming that capacitance obtained by adding together parasiticcapacitance of each thin-film electron-emitter element per se andparasitic capacitance within one pixel is defined as Ce, Ce·Rr resultsin time constant of a change in signal voltage applied to thecorresponding thin-film electron-emitter element 301.

Thus, (Ce·Rr<1H) must be taken when used as the display apparatus.

Here, 1H indicates a horizontal scanning period. Assuming that a fieldfrequency is defined as f and the effective number of scan lines isdefined as Neff (when two lines are simultaneously driven: (the numberof scan lines+2)), the horizontal scanning period (1H) is given by thefollowing equation (1):1H=1/(f·Neff)   (1)When f=60 Hz and Neff=256, for example, 1H=64 μs is obtained.

A second effect of the present invention resides in that the influenceof deviations in characteristics of wire resistance and a drivingcircuit can be reduced.

Such a functional relation as expressed by the following equation (2) isestablished between a diode voltage (Vd) applied between both electrodes(top electrode 11 and base electrode 13) of the thin-film electronemitter 301 and a diode current (Id) flowing therebetween:Id=f(Vd)   (2)

On the other hand, the total wire resistance of the row electrodes 310and column electrodes 311 is defined as R(line) the output impedance ofeach row electrode driving circuit 41 is defined as Zout(row), and theoutput impedance of each column electrode driving circuit 42 is definedas Zout(column).

Assuming that the difference between a voltage outputted from the rowelectrode driving circuit 41 and a voltage outputted from the columnelectrode driving circuit 42, i.e., an externally applied voltage isdefined as V0, the diode voltage (Vd) applied across the thin-filmelectron-emitter element 301 is expressed in the following equation (3):Vd=V0−Id(R(line)+Zout(row)+Zout(column))   (3)

Thus, the diode current (Id) that flows through the thin-filmelectron-emitter element 301, is expressed in the following equation(4):Id=f[V0−id(R(line)+Zout(row)+Zout(column))]  (4)

Therefore, when deviations ΔR(line), ΔZout(row) and ΔZout(column) existin R(line), ΔZout(row) and ΔZout (column), respectively, the diodecurrent (Id) also varies in its current value.

A current (emission current) (Ie) emitted into vacuum from the thin-filmelectron-emitter element 301 varies according to the current value ofthe diode current (Id).

Accordingly, brightness non-uniformity occurs in the display apparatus.

In the present invention, the resistors 305 are inserted every thin-filmelectron-emitter elements. Assuming that the resistance value of theresistor 305 is defined as Rr, a diode voltage (Vd) applied across thethin-film electron-emitter element 301 is expressed in the followingequation (5):Vd=V0−Id(Rr+R(line)+Zout(row)+Zout(column))   (5)

Then, Rr is set so as to become larger than the deviations {R(line),ΔZout(row) and ΔZout(column). Consequently, these deviations will notcause a deviation in the current value of the diode current (Id) andhence no brightness non-uniformity occurs.

Next consider the influence of a deviation in the resistance value ofthe pixel resistor 305 on a deviation in the amount of the emissioncurrent.

Let's assume that the externally applied voltage V0 is applied over all.The influence of the deviation in the resistance value R of the pixelresistor 305 on the current that flows through the thin-filmelectron-emitter element 301 is estimated.

Assuming that the diode current-voltage characteristics of the thin-filmelectron-emitter element 301 are represented as Id=f(V), and currentsthat flow when the resistance value of the pixel resistor 305 is givenas R and R+ΔR, are respectively defined as I and I+ΔI, the relationexpressed in the following equation (6) is established: $\begin{matrix}{\frac{\Delta I}{I} = {( \frac{\Delta R}{R + {\Delta R}} )/( {1 + \alpha} )}} & (6) \\{\alpha = \frac{r_{e}}{R + {\Delta R}}} & \quad \\{r_{e} = \frac{\mathbb{d}V}{\mathbb{d}I_{d}}} & \quad\end{matrix}$

Thus, if the resistance value R+ΔR of the pixel resistor 305 is setsmaller than a differential resistance re of the thin-filmelectron-emitter element 301 (in an operation region).

If α≧1 is established, then the above equation (6) can be transformed asthe following equation (7): $\begin{matrix}{\frac{\Delta I}{I} \leq {\frac{1}{2}( \frac{\Delta R}{R + {\Delta R}} )}} & (7)\end{matrix}$

Thus, the influence of the deviation αR in the resistance value of thepixel resistor 305 on uniformity of a displayed image is lessened.

In other words, the allowance of the deviation in the resistance valueof the pixel resistor 305 becomes large and hence the display apparatusis easy to be manufactured.

The present invention provides a display apparatus which comprises adisplay device including a first plate which has a plurality ofelectron-emitter elements each having a structure comprised of a baseelectrode, an insulating layer and a top electrode stacked on oneanother in this order, the electron-emitter element emitting electronsfrom the surface of the top electrode when a voltage of positivepolarity is applied to the top electrode; a plurality of firstelectrodes for respectively applying driving voltages to the baseelectrodes of the electron-emitter elements lying in a row (or column)direction, of the plurality of electron-emitter elements; and aplurality of second electrodes for respectively applying drivingvoltages to the top electrodes of the electron-emitter elements lying inthe column (or row) direction, of the plurality of electron-emitterelements, a frame component, and a second plate having phosphors,whereby a space surrounded by the first plate, the frame component andthe second plate is brought into vacuum, wherein the at least oneelectron-emitter element includes its corresponding base electrode andtop electrode at least one of which is connected to the first electrodeor second electrode through a resistor element or a connection wire.

In the present invention, when a defect due to a short circuit of thethin-film electron-emitter element 301 is found at a production stage,the corresponding element is cut off to thereby enable prevention of theoccurrence of the “line defect”.

FIG. 16 is a plan view showing a thin-film electron-emitter elementstructure of a conventional thin-film electron-emitter matrix.

In the conventional thin-film electron-emitter matrix as shown in FIG.16, thin-film electron-emitter elements 301 are respectively formed atregions where row electrodes 310 and column electrodes 311 spatiallyoverlap in fact. It was therefore difficult to separate only thethin-film electron-emitter elements 301 from the row electrodes 310 orcolumn electrodes 311.

In the present invention, as will be described in detail in thefollowing embodiments, electron-emitter structures of respective pixelsare devised to thereby easily separate thin-film electron-emitterelements 301 at specific pixels through the use of a laser repairtechnology or breakage by current-heating, whereby the occurrence of“line defects” can be lessened.

Incidentally, a prior-art search has been carried out based on theresult of the present invention from the viewpoint that the resistorsare formed in every pixels.

As a result, the corresponding art has not been found in the displayapparatus using the thin-film electron emitters, which is intended forthe present invention.

As a result of a further investigation of objects to be researched,which is extended up too other-types electron emitters, an example inwhich a resistive sheet is inserted into individual pixels infield-emission electron emitters, has been found out in EURODISPLAY'90,10th International Display Research Conference Proceedings (vde-verlag,Berlin, 1990), pp. 374-377.

This reference describes a field-emitter array comprising multiplicityof electron-emitting tips(emitter tips) for each pixel. By introducing aresister sheet which functions as resistance independently for eachemitter tip, a negative feedback resulting from the voltage drop in theresistor at each emitter tip averages the current deviation among theevery emitter tips in each pixel, and thereby alleviating the deviation.

The reference above mentioned aims to solve the problem that onlyspecific emitter tips inside a pixel emit a large current, thusgenerating “bright spots” INSIDE the pixel which causes degradation inimage quality.

Further, the technology described in the known art encountersdifficulties in cutting off a defect pixel with laser beam irradiationor the like for defect repairing.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing a schematic configuration of one example ofa thin-film electron-emitter matrix of an image display of the presentinvention;

FIG. 2 is a plan view illustrating a configuration of part of athin-film electron-emitter matrix of a cathode plate employed in anembodiment 1 of the present invention;

FIG. 3 is a plan view showing the relationship in position between thecathode plate and a phosphor plate employed in the embodiment 1 of thepresent invention;

FIGS. 4(a) and 4(b) are respectively fragmentary cross-sectional viewsdepicting a configuration of an image display according to theembodiment 1 of the present invention;

FIGS. 5(a) through 5(g) are respectively diagrams for describing amethod of manufacturing the cathode plate employed in the embodiment 1of the present invention;

FIG. 6 is a diagram showing other shapes of pixel resistors employed inthe embodiment 1 of the present invention;

FIG. 7 is a connection diagram illustrating a state in which drivingcircuits are connected to a display panel employed in the embodiment 1of the present invention;

FIG. 8 is a timing chart showing one example illustrative of waveformsof driving voltages outputted from the respective driving circuits shownin FIG. 7;

FIG. 9 is a diagram showing a configuration of one thin-filmelectron-emitter matrix of a cathode plate employed in an embodiment 2of the present invention;

FIGS. 10(a) through 10(g) are respectively diagrams for describing amethod of manufacturing the thin-film electron-emitter matrix of thecathode plate employed in the embodiment 2 of the present invention;

FIG. 11 is a diagram showing a schematic configuration of a thin-filmelectron-emitter matrix according to an embodiment 3 of the presentinvention;

FIG. 12 is a plan view of the thin-film electron-emitter matrixaccording to the embodiment 3 of the present invention;

FIG. 13 is a cross-sectional view illustrating a fragmentary sectionstructure of one thin-film electron-emitter element employed in theembodiment 3 of the present invention;

FIG. 14 is a diagram for describing the principle of operation of athin-film electron emitter;

FIG. 15 is a diagram showing a schematic configuration of a conventionalthin-film electron-emitter matrix; and

FIG. 16 is a plan view showing a pixel structure of a conventionaldisplay apparatus.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Preferred embodiments of the present invention will hereinafter bedescribed in detail with reference to the accompanying drawings.

Incidentally, elements of structure each having the same function in alldrawings for describing the embodiments are respectively identified bythe same reference numerals and their repetitive description willtherefore be omitted.

Embodiment 1

An image display according to an embodiment 1 of the present inventionhas a configuration wherein a display panel (display device of thepresent invention) in which brightness-modulation elements forrespective dots are formed by combining a thin-film electron-emittermatrix functioning as electron emitters used for emitting electrons andphosphors, is used to connect driving circuits to row electrodes andcolumn electrodes of the display panel respectively.

Now the display panel comprises a cathode plate formed with a thin-filmelectron-emitter matrix, and a phosphor plate formed with phosphorpatterns.

FIG. 2 is a plan view showing a configuration of part of a thin-filmelectron-emitter matrix of a cathode plate according to the presentembodiment, and FIG. 3 is a plan view showing the relationship inposition between the cathode plate and phosphor plate according to thepresent embodiment, respectively.

FIG. 4 is a fragmentary cross-sectional view showing a configuration ofthe image display according to the present embodiment, wherein FIG. 4(a)is cross-sectional views taken along cut lines A-B shown in FIGS. 2 and3, and FIG. 4(b) is cross-sectional views taken along cut lines C-Dshown in FIGS. 2 and 3.

However, the illustration of a plate 14 is omitted from FIGS. 2 and 3.

Further, a reduction scale as viewed in a vertical height direction isarbitrary in FIG. 4. Namely, while base electrodes 13, top electrodebuslines 32, and the like are respectively less than or equal to a fewμm in thickness, the distance between the plate 14 and a plate 110 isequivalent to a length of from about 1 mm to about 3 mm.

While the following description is made using an electron-emitter matrixwith 3 rows and 3 columns, it is needless to say that the numbers ofrows and columns in an actual display panel respectively result inseveral hundreds rows to a few thousand rows, and a few thousandcolumns.

In FIG. 2, regions 35 surrounded by dot lines indicate electron-emissionregions (electron-emitter elements in the present invention)respectively.

Each of the electron-emission regions 35 emits electrons into vacuumfrom within its area or region at a location defined by a tunnelinginsulator 12.

Since the electron-emission region 35 is not represented on a plan viewbecause it is covered with a top electrode 11, it is illustrated by adotted line.

FIG. 5 is a diagram for describing a method of manufacturing a cathodeplate employed in the present embodiment.

A method of fabricating a thin-film electron-emitter matrix of thecathode plate employed in the present embodiment will be explained belowwith reference to FIG. 5.

Incidentally, while only one thin-film electron-emitter element 301formed at a point where one of row electrodes 310 and one of columnelectrodes 311 both shown in FIGS. 2 and 3 intersect, is extracted andplotted in FIG. 5, a plurality of thin-film electron-emitter elements301 are actually arranged in matrix form as illustrated in FIGS. 2 and3.

Further, the right columns shown in FIG. 5 are respectively plan views,whereas the left columns are respectively cross-sectional views takenalong lines A-B in the views on the right side.

An electrically conductive film for a base electrode 13 is formed with athickness of 300 nm, for example, on an insulating substrate 14 such asglass or the like.

As a material for the base electrode 13, may be used, for example, analuminum (Al: hereinafter called “Al”) alloy.

In the present method, an Al-neodymium (Nd: hereinafter called “Nd”)alloy was used.

For example, a sputtering method, resistive-heating evaporation or thelike may be used to form such an Al alloy film.

Next, the Al alloy film is processed into strip form by resist formationusing photo lithography and etching following it to thereby form a baseelectrode 13 as shown in FIG. 5(a).

A resist used herein may be one suitable for etching, and either of wetetching and dry etching may be used as the etching.

Next, a resist is applied and patterned by exposing it with anultraviolet-ray, followed by patterning, thereby forming a resistpattern 501 as shown in FIG. 5(b).

As the resist, may be used, for example, a quinonediazide positiveresist.

Next, anodic oxidation is done while the resist pattern 501 remainsattached to the base electrode 13 to thereby form a protection layer 15as shown in FIG. 5(c).

In the present embodiment, an anodization voltage was set to about 100Vupon such anodic oxidation, and the thickness of the protection layer 15was set to about 140 nm.

The resist pattern 501 is removed with an organic solvent such asacetone or the like and thereafter the surface of the base electrode 13which had been covered with the resist is anodically oxidized again tothereby form a tunneling insulator 12 as shown in FIG. 5(d).

In the present embodiment, an anodization voltage was set to 6 V uponsuch re-anodization, and the thickness of the tunneling insulator wasset to 8 nm.

Next, an electrically conductive film for a top electrode buslineunder-layer film is formed and the resist is patterned and subjected toetching to thereby form the top electrode busline under-layer film 33 asshown in FIG. 5(e).

In the present embodiment, titanium (Ti) was used as a material for thetop electrode busline under-layer film, and the thickness thereof wasset to about 20 nm.

Next, an electrically conductive film for a top electrode busline isformed and a resist is patterned and subjected to etching to therebyform the top electrode busline 32 and a column electrode 311 as shown inFIG. 5(f).

In the present embodiment, an Al alloy was used as a material for thetop electrode busline 32 and the column electrode 311, and the thicknessthereof was set to about 300 nm.

Incidentally, Au or the like may be used as the material for the topelectrode busline 32 and the column electrode 311.

Next, an iridium (Ir) having a thickness of 1 nm, a platinum (Pt) havinga thickness of 2 nm, and a gold (Au) having a thickness of 3 nm areformed by sputtering in that order.

According to a resist and patterning by etching, a multi-layer film ofIr—Pt—Au is patterned as the top electrode 11 as shown in FIG. 5(g).

Incidentally, a region 35 surrounded by a dotted line indicates anelectron emission region in FIG. 5(g).

The electron-emission region 35, from which electrons emit into vacuum,is defined by the tunneling insulator 12.

The thin-film electron-emitter matrix is completed on the plate 14according to the above-described process.

In the thin-film electron n-emitter matrix according to the presentembodiment, electrons are emitted from the region (electron-emissionregion 35) defined by the tunneling insulator 12, i.e., the regiondefine by the resist pattern 501.

Since the protection layer 15, which is of a thick insulating film, isfor ed on the periphery of the electron-emission region 35, an electricfield applied between the top electrode and the base electrode does notconcentrate at sides or edges of the base electrode 13 and hence anelectron emission characteristic stable over a long time is obtained.

The top electrode busline under-layer film 33 has three roles.

The first role resides in that a busline under-layer film 33, being thinin thickness is provided to make certain of an electrical contactbetween a top electrode 11, whose thickness is about 10 nm or less, anda top electrode busline 32, thereby improving reliability.

When the top electrode 11 is directly formed on the top electrodebusline 32 except for the top electrode busline under-layer film 33, thetop electrode 11 is easy to break at steps of the top electrode busline32 (100 nm thick) and the reliability of a electrical connection betweenthe top electrode busline 32 and the top electrode 11 is reduced.

The second role resides in the formation of a pixel resistor 305.

As shown in FIG. 5(g), the pixel resistor 305 is shaped in a bent form,and the resistance value of the pixel resistor 305 is defined as thevalue of resistance between the top electrode busline 32 and the columnelectrode 311.

The resistance value is determined according to a material for the pixelresistor 305, the thickness thereof, and the geometrical form of thepixel resistor 305.

When, for example, titanium (Ti) is used as the material for the topelectrode busline under-layer film, the thickness thereof is set to 20nm, and a length/width ratio is set to about 40, the resistance value Rrof the pixel resistor 305 results in about 1 kΩ.

When a titanium nitride (TiN) film having a thickness of 20 nm is used,its length/with ratio may be set to about 10 and the pixel resistor 305may be set to about 1 kΩ.

Since a differential resistance (re) in an operation region, of eachthin-film electron-emitter element 301 is a few 10 kΩ, a condition of(re/Rr>1) is sufficiently satisfied.

Thus, the influence a deviation in the resistance value of each pixelresistor 305 on a displayed image is lessened for the above reason.

Since the electrostatic capacitance Ce of the thin-film electron-emitterelement 301 is about 0.1 nF, Ce·Rr=0.1 μs and a condition of CeRr>1H isalso sufficiently satisfied.

Here, 1H indicates a period, during which a signal corresponding to onerow is applied, and varies according to the number of scan lines, arefresh rate (field period) and the like of the display apparatus. 1H=10μs to 64 μs in typical cases.

The third role resides in serving itself as a “cut point” for separatinga thin-film electron-emitter element 301 having caused a defect due to ashort circuit at production from its corresponding column electrode 311.

Applying a voltage between a row electrode and a column electrodeassociated with the defect thin-film electron-emitter element 301 tothereby burn out the corresponding pixel resistor 305 may cut it off.

Alternatively, a laser beam may be applied to a portion of the pixelresistor 305 to cut off it.

Since this portion is formed of the thin top-electrode buslineunder-layer film 33, it is easy to cut.

Since other component are not placed underneath the pixel resistor 305,other region are not affected by the application of the laser beam.

Namely, it is of importance that at least part of the pixel resistor 305exists in a location where it does not intersect both of the rowelectrode 311 and the column electrode 311.

Incidentally, when the thin-film electron-emitter element 301 havingcaused the defect due to the short circuit at production is separatedfrom the corresponding column electrode 311, a connection wire forconnecting the column electrode 311 and the thin-film electron-emitterelement 301 may be used as an alternative to the pixel resistor 305.

FIG. 6 is a diagram showing another shape of the pixel resistor 305employed in the present embodiment.

FIG. 6 corresponds to FIG. 5(g). As shown in FIG. 6(a), a thin or slightportion is provided at part of the pixel resistor 305, or a portion thinin thickness may be partly provided as shown in FIG. 6(b).

The pixel resistor 30 can thus be cut easier upon the cutting thereof bythe application of the laser beam.

As described above, the advantage of the present embodiment resides inthat each pixel resistor 305 is formed through the use of the process offorming the top electrode busline under-layer film 33, which is used toenhance the reliability of the electrical connectivity between the topelectrode busline 32 and the top electrode 11.

This is made possible since the pixel resistor 305 is formed of the samematerial as the busline under-layer film 33.

Namely, as is understood from the manufacturing or fabricating processshown in FIG. 5, the pixel resistors are introduced according to thenumber of execution of lithography, which is identical to theconventional one.

Thus, an increase in the production cost due to the introduction of eachpixel resistor 305 does not occur.

However, the present invention is not limited to it. The pixel resistor305 may of course be formed of a material different from that for thebusline under-layer film 33.

While a geometrical factor that will produce a deviation in theresistance value of each pixel resistor 305 at its production, resultsfrom the width and length of the pixel resistor 305, the former (width)is defined by a photo-mask at the formation of the pixel resistor 305.Therefore, the deviation in the width geometry is small.

The latter (length) side fined by a photo-mask at the formation of thecolumn electrode 311 and the top electrode busline 32. Therefore, thedeviation in the length geometry is small. Namely, the pixel resistor305 can be formed with a small deviation.

There are steps each corresponding to the thickness (about 30 nm) of thebase electrode 13 are provided between the base electrode 13 and theplate 14.

In the present embodiment, as shown in FIGS. 2 and 4, the top electrodebusline 32 (about 300 nm in thickness) is designed to extend across thesteps to thereby avoid wire breaking at the steps.

The phosphor plate according to the present embodiment comprises blackmatrixes 120 formed on a plate 110 such as soda lime glass or the like,phosphors (114A through 114C) of red (R), green (G) and blue (B), whichare formed within trenches or grooves of the black matrixes 120, and ametal back film 122 formed over these.

A method of manufacturing the phosphor plate according to the presentembodiment will be explained below.

The black matrixes 120 are formed on the plate 110 with the object ofincreasing the contrast ratio of the display apparatus (see FIG. 4(b)).

Next, the red phosphor 114A, green phosphor 114B and blue phosphor 114Care formed.

These phosphors were patterned by photo lithography in a manner similarto being used in the phosphor screen of the ordinary cathode-ray tube.

As the phosphors, for example, Y₂O₂S:Eu (P22-R), ZnS:Cu, Al (P22-G), andZnS:Ag (P22-B) were respectively used as red, green and blue.

Next, filming is effected on the plate 110 with a film such asnitrocellulose or the like and there after Al is evaporated onto theentire plate 110 with a thickness of from about 50 nm to about 300 nm tothereby produce the metal back film 122.

Thereafter, the plate 110 is heated at about 400° C. to pyrolize organicsubstances such as a filming film, PVA, etc. The phosphor plate iscompleted in this way.

The cathode plate and phosphor plate fabricated in this way are sealedwith frit glass with a spacer 60 interposed therebetween.

A relationship of positions between the phosphors (114A through 114C)formed in the phosphor plate and the thin-film electron-emitter matrixof the cathode plate is represented as shown in FIG. 3.

Incidentally, the components on the plate 110 are illustrated by obliquelines alone in FIG. 3 to show the relationship of positions between thephosphors (114A through 114C), the black matrixes 120 and thecomponents.

The relationship between the electron-emission region 35, i.e., theportion where the tunneling insulator 12 is formed, and the width ofeach of the phosphors (114A through 114C) is of importance.

In the present embodiment, the width of the electron-emission region 35is designed so as to be narrower than that of each of the phosphors(114A through 114C) in consideration of an electron beam emitted fromthe thin-film electron emitter 301 being slightly broadened spatially.

Further, since FIG. 3 is a diagram for indicating the relationship ofpositions between the electron-emission regions 35 and the phosphors(114A through 114C), other components on the plate 14, e.g., the topelectrodes 11, the top electrode buslines 32, and the pixel resistors305 are omitted.

The distance between the plate 110 and the plate 14 is set so as torange from about 1 mm to about 3 mm.

The spacer 60 is inserted to prevent breakage of the display panel dueto an external force of atmospheric pressure when the interior of thedisplay panel is vacuumized.

Thus, when a display apparatus having a display area represented by lessthan or equal to a width of about 4 cm×a length of about 9 cm isfabricated by using glass having a thickness of 3 mm as for the plates14 and 110, it can endure the atmospheric pressure owing to mechanicalstrengths of the plates 110 and 14 per se. It is therefore unnecessaryto insert the spacer 60.

The spacer 60 is shaped in the form of a rectangular parallelepiped asshown in FIG. 3 by way of example.

While there are provided posts for the spacers 60 every three rows inthe present embodiment, the number of the posts (layout density) may bereduced within an endurable range of mechanical strength.

Sheet-shape or pillar-shape posts made up of glass or ceramic are placedas the pacers 60.

Incidentally, while the spacer 60 seems like being not in contact withthe plate 14 in FIG. 4(a), it is actually in contact with the columnelectrodes 311 on the plate 14.

In FIG. 4(a), a clearance can be defined by the thickness of the columnelectrode 311.

The sealed display panel is sealed off by being pumped to a vacuum ofabout 1×10⁻⁷ Torr.

In order to maintain the degree of vacuum in the display panel in a highvacuum, a getter film is formed or a getter material is activated at apredetermined position (not shown) lying within the display panelimmediately before or after its sealing.

In the case of a getter material with barium (Ba) as a principalcomponent, a getter film can be formed by inductive heating.

The display panel using the thin-film electron-emitter matrix iscompleted in this way.

Since the distance between the plate 110 and the plate 14 extends longso as to range from about 1 mm to about 3 mm in the present embodiment,an acceleration voltage applied to the metal back film 122 can be set toa high voltage of 3 KV to 6 KV. Thus, the phosphors for the cathode-raytube (CRT) can be used for the phosphors (114A through 114C) asdescribed above.

FIG. 7 is a connection diagram showing a state in which driving circuitsare connected to the display panel according to the present embodiment.

Row electrodes 310 (base electrodes 13) are respectively connected torow electrode driving circuits 41, and column electrodes 311 (topelectrode buslines 32) are respectively connected to column electrodedriving circuits 42.

Connections between the respective driving circuits (41 and 42) and acathode plate are made by, for example, one obtained by subjecting atape carrier package to connect-by-pressure by means of ananisotropically conductive film, or chip-on-glass or the like obtainedby directly implementing a semiconductor chip constituting each of thedriving circuits (41 and 42) on the plate 14 of the cathode plate.

An acceleration voltage, which ranges from about 3 KV to about 6 KV, isalways applied to the metal back film 122 from an acceleration voltagesource 43.

FIG. 8 is a timing chart showing one example illustrative of waveformsof driving voltages outputted from the respective driving circuits shownin FIG. 7.

Let's now assume that an nth row electrode 310 is represented as Rn, anmth column electrode 311 is represented as Cm, and a dot for anintersection of the nth row electrode 310 and the mth column electrode311 is represented as (n, m) At a time t0, any electrode carries avoltage of 0 and hence no electrons are emitted, whereby the phosphors(114A through 114C) do not emit light.

At a time t1, the row electrode driving circuit 41 applies a drivingvoltage of (V_(R1)) to its corresponding row electrode 310 of R1, andthe column electrode driving circuits 42 apply a driving voltage of(V_(C1)) to their corresponding column electrodes 311 of (C1 and C2).

Since a voltage of (V_(C1)−V_(R1)) is applied between the top electrode11 and the base electrode 13 for dots (1, 1) and (1, 2) through thepixel resistor 305, thin-film electron emitters for the two dots emitelectrons into vacuum if the voltage of (V_(C1)−V_(R1))) is set togreater than or equal to a threshold voltage for electron emission.

In the present embodiment, V_(R1)=−5V and V_(C1)=4.5V.

The emitted electrons are accelerated by the voltage applied to themetal back film 122 and thereafter collide with the phosphors (114Athrough 114C) to thereby allow the phosphors (114A through 114C) to emitlight.

When the row electrode driving circuit 41 applies the driving voltage of(V_(R1)) to s corresponding row electrode 310 of R2, and the columnelectrode driving circuit 42 applies the voltage of (V_(C1)) to itscorresponding column electrode 311 of C1 at a time t2, a dot (2, 1)lights up similarly.

When the driving voltages having such voltage waveforms as shown in FIG.8 are applied to their corresponding row and column electrodes 310 and311, only dots diagonally shaded in FIG. 7 light up.

In this way, changing the signals applied to the column electrodes 311allows the display of a desired image or information.

By suitably changing the magnitude of the driving voltage (V_(C1))applied to each column electrode 311 in accordance with an image signal,an image having a gray scale can be displayed.

Incidentally, in order t release the charges accumulated in thetunneling insulator 12, the row electrode driving circuits 41 apply adriving voltage of (V_(R2)) to all of the row electrodes 310 andsimultaneously the column electrode driving circuits 42 apply a drivingvoltage of 0 V to all of the column electrodes at a time t4 in FIG. 8.

Since V_(R2)=5 V now, a voltage of a −V_(R2)=−5 V is applied to each ofthe thin-film electron emitters 301.

Applying the voltage (reverse pulse) of polarity opposite to at electronemission in this way allows an improvement in lifetime characteristic ofeach thin-film electron emitter.

Incidentally, the use of a vertical blanking period of a video signal asreverse pulse applying periods (see t4 to t5 and t8 to t9 in FIG. 18)yields satisfactory matching with the video signal.

Embodiment 2

FIG. 9 is a diagram showing a configuration of one thin-filmelectron-emitter element 301 of a thin-film electron-emitter matrix of acathode plate employed in an embodiment 2 of the present invention. Theright side is a plan view and the left side is a cross-sectional viewtaken along a cut line A-B.

In the present embodiment, a pixel resistor 305 is formed of the samematerial as a top electrode 11.

A production process is simplified by forming the pixel editors 305 withthe same material as the top electrode 11 in this way.

The resistance value of the pixel resistor 305 in this case is definedas the value of resistance between a column electrode 311 and a topelectrode busline 32 in a manner similar to the embodiment 1.

Ones other than such a pixel structure are similar to the firstembodiment.

FIG. 10 is a diagram for describing a method of manufacturing thethin-film electron-emitter matrix of the cathode plate according to thepresent embodiment.

Incidentally, only one thin-film electron-emitter element 301 formed atthe intersection of one of the row electrodes 310 and one of the columnelectrodes 311 in FIG. 1 is extracted and plotted in FIG. 10.

The right column in FIG. 10 shows plan views and the left column showscross-sectional views taken along cut lines A-B in the right drawings.

Up to FIG. 10(d), the thin-film electron-emitter matrix is formedaccording to th same method as up to FIG. 5(d).

Next, Sn-doped indium oxide (i.e., ITO (Indium Tin Oxide)) film isformed by sputtering. Here, the thickness of the ITO film was set toabout 10 nm.

According to a resist and patterning by etching, the ITO film ispatterned to form a top electrode 11 as shown in FIG. 10(e).

Next, resists 502 are formed with a pattern shown in FIG. 10(f) andthereafter subjected to electroplating to thereby form a top electrodebusline 32 and a column electrode 311.

In the present embodiment, an electroplating solution for gold-platingis used to pass current of about 0.1A/dm² through the top electrode 11,whereby a gold film is selectively grown or deposited on the topelectrode 11.

The busline 32, which is about 400 nm in thickness, is formed in thisway.

While the gold electroplating is used in the present embodiment, otherelectrode materials such as copper (Cu), Nickel (Ni), etc. may of coursebe used.

After the busline 32 has been formed by plating, the resists 502 arepeeled off to complete the thin-film electron-emitter matrix accordingto the present embodiment as shown in FIG. 10(g).

The feature of the present embodiment resides in that the top electrode11, being thin in thickness is placed below the busline 32, being thickin thickness.

Therefore, the electrical connection between the top electrode busline32 and the top electrode 11 can be ensured with satisfactory reliabilityeven if its connection is not made via the top electrode buslineunder-layer film.

The manufacturing method shown in FIG. 10 is illustrated as one example.It is needless to say that the structure shown in FIG. 9 can be formedeven if plating is not used for the growth or deposition of the topelectrode busline 32 and the column electrode 311.

A method of forming phosphors or the like on a plate 110, therelationship of positions between thin-film electron-emitter elements301 and the phosphors (114A through 114C), a method of connectingdriving circuits, and a method of driving the same are similar to thoseemployed in the embodiment 1 mentioned previously.

Embodiment 3

FIG. 11 is a diagram showing a schematic configuration of a thin-filmelectron-emitter matrix according to an embodiment 3 of the presentinvention

In the present embodiment as shown in FIG. 11, pixel resistors 305 arerespectively inserted between row electrodes 310 and thin-film electronemitter elements 301.

Described more specifically, the pixel resistors 305 are respectivelyinserted between base electrodes 13 for thin-film electron-emitterelements 301 and row electrodes 310.

As one example for implementing a pixel structure shown in FIG. 11, aspecific pixel structure is shown in FIGS. 12 and 13.

FIG. 12 is a plan view of the thin-film electron-emitter matrixaccording to the present embodiment.

FIG. 13 is a cross-sectional view showing a fragmentary sectionstructure of one thin-film electron-emitter element 301 according to thepresent embodiment, wherein FIG. 13(a) is a cross-sectional view takenalong cut line A-B of FIG. 12, and FIG. 13(b) is a cross-sectional viewtaken along cut line C-D of FIG. 12.

As shown in FIG. 12, a pixel resistor 305 connects between a rowelectrode 310 and a base electrode 13.

The pixel resistor 305 is covered with a pixel-resistor insulator 306,and the row electrode 310 is covered with a row-electrode insulator 315.

The base electrode 13 is formed of an Al—Nd alloy or the like at aportion corresponding to the thin-film electron-emitter element (pixel)301.

Subsequently, a thin-film electron emitter may be formed according to amethod substantially similar to the method described in the embodiment1.

As is understood from FIG. 12, the column electrode 311 and the topelectrode buslines 32 are identical in the present embodiment.

It is therefore easy to finely fabricate the pitch between the columnsadjacent to each other.

In a sub-pixel-configured color display apparatus of a verticalRGB-stripe pattern, a sub-pixel pitch in a column direction, i.e., thepitch of an arrangement of the thin-film electron-emitter elements 301reaches ⅓ of a pitch in a row direction. It is therefore of importancethat the pitch in the column direction can finely be set. This resultsin the advantage of this pixel structure.

However, a drawback arises in that the production process becomesslightly complex as compared with the embodiments 1 and 2.

A method of forming phosphors or the like on a plate 110, therelationship of positions between thin-film electron-emitter elements301 and the phosphors (114A through 114C), a method of connectingdriving circuits, and a method of driving the same are similar to thoseemployed in the embodiment 1.

While the example (FIG. 1) of connecting the pixel resistors 305 totheir corresponding column electrodes 311 and the example (FIG. 11) ofconnecting the same to their corresponding row electrodes 310 have beenmade in the above description, it is needless to say that the effect ofthe present invention is obtained even if the pixel resistors 305 areinserted between the column electrodes 311 and electron-emitter elementas well as between row electrodes 310 and electron-emitter element.

While the embodiments in which the pixel resistors 305 have beenconnected to all the electron-emitter elements 301, have been describedin the respective embodiments, the electron-emitter elements 301 towhich no pixel resistors 305 are connected, may be provide in any numberwithin a range in which a production yield is not extremely reduced.

While the invention made by the present inventors has been describedspecifically by the illustrated embodiments, the present invention isnot limited to the embodiments. It is needless to say that variouschanges can be made thereto within the scope not departing from thesubstance thereof.

Advantageous effects obtained by typical one of the inventions disclosedin the present application will be explained in brief as follows:

-   -   (1) According to an image display of the present invention, a        production yield can be enhanced since it is possible to prevent        point defects from bringing about a “line defect”.    -   (2) According to an image display of the present invention,        since it is possible to lessen the influence of a deviation in        wire resistance and a deviation in the characteristic of a        driving circuit on the non-uniformity across the display area in        brightness and the amount of a emission current, the fabrication        thereof becomes easy, and the production cost thereof can be        reduced.

1. An image display comprising: a display device including, a firstplate having, a plurality of electron-emitter elements each having astructure comprised of a base electrode, an insulating layer and a topelectrode stacked on one another in this order, said electron-emitterelement emitting electrons from the surface of the top electrode when avoltage of positive polarity is applied to the top electrode; aplurality of first electrodes for respectively applying driving voltagesto the base electrodes of the electron-emitter elements lying in a row(or column) direction, of said plurality of electron-emitter elements;and a plurality of second electrodes for respectively applying drivingvoltages to the top electrodes of the electron-emitter elements lying inthe column (or row) direction, of said plurality of electron-emitterelements; a frame component; and a second plate having phosphors;wherein a space surrounded by said first plate, said frame component andsaid second plate is brought into vacuum; wherein at least on saidelectron-emitter element includes its corresponding base electrode andtop electrode, at least one of which is connected to the first electrodeor second electrode through a resistor element.
 2. An image displaycomprising: a display device including, a first plate having, aplurality of electron-emitter elements each having a structure comprisedof a base electrode, an insulating layer and a top electrode stacked onone another in this order, said electron-emitter element emittingelectrons from the surface of the top electrode when a voltage ofpositive polarity is applied to the top electrode; a plurality of firstelectrodes for respectively applying driving voltages to the baseelectrodes of the electron-emitter elements lying in a row (or column)direction, of said plurality of electron-emitter element; and aplurality of second electrodes for respectively applying drivingvoltages to the top electrodes of the electron-emitter elements lying inthe column (or row) direction, of said plurality of electron-emitterelements; a frame component; and a second plate having phosphors;wherein a space surrounded by said first plate, said frame component andsaid second plate is brought into vacuum; wherein said plurality ofelectron-emitter elements respectively include the base electrodes andtop electrodes, at least one of which are respectively connected to thefirst electrodes or the second electrodes through resistor elements. 3.An image display according to claim 1, further including first drivingmeans for supplying driving voltages to said respective first electrode,and second driving means for supplying driving voltages to aidrespective second electrodes, and the resistance value of said eachresistor element is larger than a value obtained by multiplying a largervalue of output impedance of said first driving means and an outputimpedance of said second driving mean by ten times.
 4. An image displayaccording to claim 1, wherein when the resistance value of the resistorelement is defined as R, and the electrostatic capacitance of theelectron-emitter element is defined as C, the product (R·C) of theresistance value of the resistor element and the electrostaticcapacitance of the electron-emitter element is smaller than a horizontalscanning period 1H of a displayed video signal.
 5. An image displayaccording to claim 1, wherein the resistance value of the resistorelement is smaller than a differential resistance of theelectron-emitter element in an operation region thereof.
 6. An imagedisplay according to claim 1, wherein each of said resistor elementsincludes at least some portion thereof that does not intersect eitherthe first electrodes or the second electrodes.
 7. An image displayaccording to claim 1, wherein the resistor element has at least onebend.
 8. An image display according to claim 1, wherein the resistorelement has a portion narrower than other portions in line width or aportion thinner than other portions in thickness.
 9. An image displayaccording to claim 1, wherein said each first electrode shares the baseelectrode of said each electron-emitter element, and theelectron-emitter element connected with the resistor element includesthe top electrode connected to the second electrode through the resistorelement.
 10. An image display according to claim 9, wherein theelectron-emitter element connected with the resistor element has a topelectrode busline under-layer film electrically connected to the topelectrode, and the resistor element is formed of the same material asthe top electrode busline under-layer film.
 11. An image displayaccording to claim 10, further including top electrode buslines, each ofwhich is provided so as to cover an edge of the base electrode, and ison the top electrode busline under-layer film.
 12. An image displayaccording to claim 9, wherein the resistor element is formed of the samematerial as the top electrode of the electron-emitter element connectedwith the resistor element.
 13. An image display according to claim 12,further including top electrode busline each electrically connected tothe top electrode and provided so as to cover an edge of the baseelectrode.
 14. An image display according to claim 1, wherein said eachelectron-emitter element has a top electrode busline which iselectrically connected to the top electrode and shares the secondelectrode, and the electron-emitter element connected with the resistorelement includes the base electrode connected to the first electrodethrough the resistor element.
 15. An image display according to claim 1,wherein electron-emitter elements from which the resistor elements arerespectively cut off and which are respectively electricallydisconnected from the first electrodes or the second electrodes.
 16. Animage display display comprising: a display device including, a firstplate having, a plurality of electron-emitter elements each having astructure comprised of a base electrode, an insulating layer and a topelectrode stacked on one another in this order, said electron-emitterelement emitting electrons from the surface of the top electrode when avoltage of positive polarity is applied to the top electrode; aplurality of first electrodes for respectively applying driving voltagesto the base electrodes of the electron-emitter elements lying in a row(or column) direction, of said plurality of electron-emitter element;and a plurality of second electrodes for respectively applying drivingvoltages to the top electrodes of the electron-emitter elements lying inthe column (or row) direction, of said plurality of electron-emitterelements; a frame component; and a second plate having phosphors;wherein a space surrounded by said first plate, said frame component andsaid second plate is brought into vacuum, and wherein a plurality ofsaid electron-emitter elements respectively include the base electrodesand the top electrodes, at least one of which are respectively connectedto the first electrodes or the second electrodes through connectionwires.
 17. An image display a according to claim 16, wherein each ofsaid connection wires includes at least some portion thereof that doesnot intersect either the first electrodes or the second electrodes. 18.An image display according to claim 16, wherein the connection wire hasat least one bend.
 19. An image display according to claim 16, whereinthe connection wire has a portion narrower than other portions in linewidth or a portion thinner than other portions in thickness.
 20. Animage display according to claim 16, further including electron-emitterelements from which the connection wires are cut and which areelectrically disconnected from the first electrodes or the secondelectrodes.
 21. A method of manufacturing an image display comprising: adisplay device including, a first plate having, a plurality ofelectron-emitter elements each having a structure comprised of a baseelectrode, an insulating layer and a top electrode stacked on oneanother in this order, said electron-emitter element emitting electronsfrom the surface of the top electrode when a voltage of positivepolarity is applied to the top electrode; a plurality of firstelectrodes for respectively applying driving voltages to the baseelectrodes of the electron-emitter elements lying in a row (or column)direction, of said plurality of electron-emitter elements; and aplurality of second electrodes for respectively applying drivingvoltages to the top electrodes of the electron-emitter elements lying inthe column (or row) direction, of said plurality of electron-emitterelements; a frame component; and a second plate having phosphors;wherein a space surrounded by said first plate, said frame component andsaid second plate is brought into vacuum, and wherein said respectiveelectron-emitter elements have the base electrodes and the topelectrodes, at least one of which are respectively connected to thefirst electrodes or the second electrodes through resistor elements,said method comprising the step of: cutting the resistor elementscorresponding to arbitrary electron-emitter elements of said pluralityof electron-emitter elements and electrically disconnecting thearbitrary electron-emitter elements from the first electrodes or thesecond electrodes.
 22. A method of manufacturing an image displaycomprising: a display device including, a first plate having, aplurality of electron-emitter elements each having a structure comprisedof a base electrode, an insulating layer and a top electrode stacked onone another in this order, said electron-emitter element emittingelectrons from the surface of the top electrode when a voltage ofpositive polarity is applied to the top electrode; a plurality of firstelectrodes for respectively applying driving voltages to the baseelectrodes of the electron-emitter elements lying in a row (or column)direction, of said plurality of electron-emitter element; and aplurality of second electrodes for respectively applying drivingvoltages to the top electrodes of the electron-emitter elements lying inthe column (or row) direction, of said plurality of electron-emitterelements; a frame component; and a second plate having phosphors;wherein a space surrounded by said first plate, said frame component andsaid second plate is brought into vacuum, and wherein said respectiveelectron-emitter elements have the base electrodes and the to topelectrodes, at least one of which are respectively connected to thefirst electrodes or the second electrodes through connection wires, saidmethod comprising the step of: cutting the connection wirescorresponding to arbitrary electron-emitter elements of said pluralityof electron-emitter elements and electrically disconnecting thearbitrary electron-emitter elements from the first electrodes or thesecond electrodes.
 23. An image display, comprising: a plurality ofelectron-emitter elements arranged in a matrix form; a plurality ofcolumn wires arranged in a first direction, and applying a first drivingvoltage to the electron-emitter elements; a plurality of row wiresarranged in a second direction crossing the first direction, andapplying a second driving voltage to the electron-emitter element; afirst plate comprising the row wires and column wires; and a secondplate having phosphors, wherein a space enclosed by the first plate andthe second plate is a vacuum, the plurality of electron-emitter elementsare provided in an area where the column wires are formed and outsidethe area where the row wires are formed, the plurality ofelectron-emitter elements comprise a first electrode and a secondelectrode, the first electrode is coupled to the column wire, the secondelectrode is coupled to the row wire, a connecting wire is placedbetween the second electrode and the row wire, and the line width of therow wire is thicker than the line width of the connecting wire.
 24. Theimage display according to claim 23, wherein the connecting wire isresistor element.
 25. The image display according to claim 23, whereinthe connecting wires placed between the row wires and the secondelectrodes have connecting wires cut.
 26. The image display according toclaim 23, wherein the connecting wire is coupled to the row wire in aportion where the connecting wire traverses the row wire.
 27. The imagedisplay according to claim 26, further comprising: a first drivingcircuit applying the first driving voltage to the column wire, whereinthe resistance of the connecting wire is larger than an output impedanceof the first driving circuit multiplied by
 10. 28. The image displayaccording to claim 26, wherein the resistance value of the connectingwire multiplied by the electrostatic capacitance of the electron-emitterelement is smaller than the horizontal scanning period of a displayedvideo signal.
 29. The image display according to claim 26, wherein theresistance value of the connecting wire is smaller than the differentialresistance of the operation region of the electron-emitter element. 30.The image display according claim 1, wherein the phosphor comprises afirst phosphor layer, a second phosphor layer, and a third phosphorlayer; the plurality of electron-emitter elements include a firstelectron-emitter element emitting electrons to the first phosphor layer,a second electron-emitter element emitting electrons to the secondphosphor layer, and a third electron-emitter element emitting electronsto the third phosphor layer; and a pixel displaying color images whichis comprised of the first, second, and third electron-emitter elements.31. The image display according to claim 30, wherein the first, second,third electron-emitters are coupled to the same row wire.